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| M Features * * * * * * * * * * * 1.6 A Typical Quiescent Current Input Operating Voltage Range: 2.3V to 6.0V Output Voltage Range: 1.2V to 5.0V 250 mA Output Current for output voltages 2.5V 200 mA Output Current for output voltages < 2.5V Low Dropout (LDO) voltage - 178 mV typical @ 250 mA for VOUT = 2.8V 0.4% Typical Output Voltage Tolerance Standard Output Voltage Options: - 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V Stable with 1.0 F Ceramic Output capacitor Short-Circuit Protection Overtemperature Protection MCP1700 Description The MCP1700 is a family of CMOS low dropout (LDO) voltage regulators that can deliver up to 250 mA of current while consuming only 1.6 A of quiescent current (typical). The input operating range is specified from 2.3V to 6.0V, making it an ideal choice for two and three primary cell battery-powered applications, as well as single cell Li-Ion-powered applications. The MCP1700 is capable of delivering 250 mA with only 178 mV of input to output voltage differential (VOUT = 2.8V). The output voltage tolerance of the MCP1700 is typically 0.4% at +25C and 3% maximum over the operating junction temperature range of -40C to +125C. Output voltages available for the MCP1700 range from 1.2V to 5.0V. The LDO output is stable when using only 1 F output capacitance. Ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. Overcurrent limit and overtemperature shutdown provide a robust solution for any application. Package options include the SOT23, SOT89-3 and TO92. Low Quiescent Current LDO Applications * * * * * * * * * * Battery-powered Devices Battery-powered Alarm Circuits Smoke Detectors CO2 Detectors Pagers and Cellular Phones Smart Battery Packs Low Quiescent Current Voltage Reference PDAs Digital Cameras Microcontroller Power Package Types 3-Pin SOT23-A VIN 3 MCP1700 1 2 MCP1700 1 2 3 GND VIN V OUT 3-Pin SOT-89 VIN 3-Pin TO-92 MCP1700 123 Related Literature * AN765, "Using Microchip's Micropower LDOs", DS00765, Microchip Technology Inc., 2002 * AN766, "Pin-Compatible CMOS Upgrades to BiPolar LDOs", DS00766, Microchip Technology Inc., 2002 * AN792, "A Method to Determine How Much Power a SOT23 Can Dissipate in an Application", DS00792, Microchip Technology Inc., 2001 GND VOUT GND V IN V OUT 2003 Microchip Technology Inc. DS21826A-page 1 MCP1700 Functional Block Diagrams MCP1700 VIN VOUT Error Amplifier +VIN Voltage Reference + Over Current Over Temperature GND Typical Application Circuits MCP1700 GND VOUT 1.8V IOUT 150 mA VIN VOUT COUT 1 F Ceramic VIN (2.3V to 3.2V) CIN 1 F Ceramic DS21826A-page 2 2003 Microchip Technology Inc. MCP1700 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VDD ............................................................................................ +6.5V All inputs and outputs w.r.t. .............(VSS-0.3V) to (V IN+0.3V) Peak Output Current .................................... Internally Limited Storage temperature .....................................-65C to +150C Maximum Junction Temperature ................................... 150C Operating Junction Temperature...................-40C to +125C ESD protection on all pins (HBM;MM)............... 4 kV; 400V DC CHARACTERISTICS Electrical Characteristics: Unless otherwise specified, all limits are established for V IN = VR + 1, ILOAD = 100 A, COUT = 1 F (X5R), C IN = 1 F (X5R), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 6) of -40C to +125C. Parameters Input / Output Characteristics Input Operating Voltage Input Quiescent Current Maximum Output Current Output Short Circuit Current V IN Iq IOUT_mA IOUT_SC 2.3 -- 250 200 -- -- 1.6 -- -- 408 6.0 4 -- -- -- V A mA mA Note 1 IL = 0 mA, VIN = VR +1V For VR 2.5V For VR < 2.5V VIN = VR +1V, VOUT = GND, Current (peak current) measured 10 ms after short is applied. Note 2 Note 3 (VR+1)V VIN 6V IL = 0.1 mA to 250 mA for VR 2.5V IL = 0.1 mA to 200 mA for VR < 2.5V Note 4 IL = 250 mA, (Note 1, Note 5) IL = 200 mA, (Note 1, Note 5) 10% V R to 90% VR VIN = 0V to 6V, RL = 50 resistive Sym Min Typ Max Units Conditions Output Voltage Regulation VOUT Temperature Coefficient Line Regulation Load Regulation VOUT TCVOUT VOUT / (VOUTXVIN ) VR-3.0% VR-2.0% -- -1.0 -1.5 VR0.4 % 50 0.75 1.0 VR+3.0% VR+2.0% -- +1.0 +1.5 V ppm/C %/V % VOUT /VOUT Dropout Voltage VR > 2.5V Dropout Voltage VR < 2.5V Output Rise Time Note 1: 2: 3: 4: 5: 6: VIN-V OUT VIN-V OUT TR -- -- -- 178 150 500 350 350 -- mV mV s 7: The minimum VIN must meet two conditions: VIN 2.3V and VIN (VR + 3.0%) +VDROPOUT. VR is the nominal regulator output voltage. For example: V R = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The input voltage (VIN = VR + 1.0V); IOUT = 100 A. TCV OUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), V OUT-HIGH = highest voltage measured over the temperature range. V OUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with a VR + 1V differential applied. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained junction temperatures above 150C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant. 2003 Microchip Technology Inc. DS21826A-page 3 MCP1700 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise specified, all limits are established for V IN = VR + 1, ILOAD = 100 A, COUT = 1 F (X5R), C IN = 1 F (X5R), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 6) of -40C to +125C. Parameters Output Noise Power Supply Ripple Rejection Ratio Thermal Shutdown Protection Note 1: 2: 3: 4: 5: 6: Sym eN PSRR Min -- -- Typ 3 44 Max -- -- Units V/(Hz) dB 1/2 Conditions IL = 100 mA, f = 1 kHz, COUT = 1 F f = 100 Hz, COUT = 1 F, IL = 50 mA, VINAC = 100 mV pk-pk, CIN = 0 F, VR = 1.2V VIN = VR + 1, IL = 100 A TSD -- 140 -- C 7: The minimum VIN must meet two conditions: VIN 2.3V and VIN (VR + 3.0%) +VDROPOUT. VR is the nominal regulator output voltage. For example: V R = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The input voltage (VIN = VR + 1.0V); IOUT = 100 A. TCV OUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), V OUT-HIGH = highest voltage measured over the temperature range. V OUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with a VR + 1V differential applied. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained junction temperatures above 150C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant. TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise specified, all limits are established for V IN = VR + 1, ILOAD = 100 A, COUT = 1 F (X5R), CIN = 1 F (X5R), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 1) of -40C to +125C. Parameters Temperature Ranges Specified Temperature Range Operating Temperature Range Storage Temperature Range Thermal Package Resistance Thermal Resistance, SOT23-A JA JA JA -- -- Thermal Resistance, SOT89 Thermal Resistance, TO-92 Note 1: -- -- 335 230 52 131.9 -- -- -- -- C/W C/W C/W C/W Minimum Trace Width Single Layer Board Typical FR4 4-layer Application Typical, 1 square inch of copper EIA/JEDEC JESD51-751-7 4-Layer Board TA TA TA -40 -40 -65 +125 +125 +150 C C C Sym Min Typ Max Units Conditions The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained junction temperatures above 150C can impact the device reliability. DS21826A-page 4 2003 Microchip Technology Inc. MCP1700 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X5R), CIN = 1 F Ceramic (X5R), IL = 100 A, TA = +25C, VIN = VR +1V. Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant. 3.0 1.206 TJ = +125C 1.204 TJ = +125C VR = 1.2V IOUT = 0.1 mA Quiescent Current (A) 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 VR = 1.2V IOUT = 0 A Output Voltage (V) 1.202 1.200 1.198 1.196 1.194 1.192 1.190 TJ = - 40C TJ = +25C TJ = - 40C TJ = +25C 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) Input Voltage (V) FIGURE 2-1: Input Voltage. 50 45 Input Quiescent Current vs. FIGURE 2-4: Output Voltage vs. Input Voltage (VR = 1.2V). 1.8 VR = 1.8V IOUT = 0.1 mA VR = 2.8V TJ = +25C TJ = +125C Ground Current (A) 35 30 25 20 15 10 5 0 0 25 50 Output Voltage (V) 40 1.795 1.79 TJ = - 40C 1.785 1.78 1.775 1.77 TJ = - 40C TJ = +125C TJ = +25C 75 100 125 150 175 200 225 250 2 2.5 3 3.5 4 4.5 5 5.5 6 Load Current (mA) Input Voltage (V) FIGURE 2-2: Current. 2.50 Ground Current vs. Load FIGURE 2-5: Output Voltage vs. Input Voltage (VR = 1.8V). 2.800 2.798 2.796 2.794 2.792 2.790 2.788 2.786 2.784 2.782 2.780 2.778 TJ = +125C TJ = - 40C TJ = +25C VR = 2.8V IOUT = 0.1 mA Quiscent Current (A) VR = 5.0V 2.00 1.75 1.50 1.25 -40 -25 -10 5 20 35 50 65 80 95 110 125 VR = 1.2V VR = 2.8V Output Voltage (V) 2.25 VIN = VR + 1V IOUT = 0 A 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6 Junction Temperature (C) Input Voltage (V) FIGURE 2-3: Quiescent Current vs. Junction Temperature. FIGURE 2-6: Output Voltage vs. Input Voltage (VR = 2.8V). 2003 Microchip Technology Inc. DS21826A-page 5 MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X5R), CIN = 1 F Ceramic (X5R), IL = 100 A, TA = +25C, VIN = VR +1V. 5.000 4.995 VR = 5.0V IOUT = 0.1 mA TJ = +25C 2.798 2.796 2.794 2.792 2.790 2.788 2.786 2.784 2.782 2.780 2.778 5 5.2 5.4 5.6 5.8 6 0 50 100 150 200 250 TJ = +125C TJ = - 40C TJ = +25C VR = 2.8V VIN = VR + 1V Output Voltage (V) 4.990 4.985 4.980 4.975 4.970 4.965 4.960 4.955 TJ = +125C TJ = - 40C Input Voltage (V) Output Voltage (V) Load Current (mA) FIGURE 2-7: Output Voltage vs. Input Voltage (VR = 5.0V). 1.21 1.20 1.19 1.18 1.17 1.16 1.15 0 25 50 75 100 125 150 175 200 TJ = +125C TJ = +25C TJ = - 40C VR = 1.2V VIN = VR + 1V FIGURE 2-10: Output Voltage vs. Load Current (VR = 2.8V). 5.000 4.995 TJ = +25C TJ = - 40C V R = 5.0V V IN = VR + 1V TJ = +125C Output Voltage (V) Output Voltage (V) 4.990 4.985 4.980 4.975 4.970 4.965 4.960 4.955 0 50 100 150 200 250 Load Curent (mA) Load Current (mA) FIGURE 2-8: Output Voltage vs. Load Current (VR = 1.2V). 1.792 1.790 FIGURE 2-11: Output Voltage vs. Load Current (VR = 5.0V). 0.25 VR = 2.8V TJ = +125C TJ = +25C Output Voltage (V) 1.788 1.786 1.784 1.782 1.780 1.778 0 Dropout Votage (V) TJ = +25C TJ = - 40C TJ = +125C 0.2 0.15 0.1 TJ = - 40C 0.05 V R = 1.8V V IN = VR + 1V 25 50 75 100 125 150 175 200 0 0 25 50 75 100 125 150 175 200 225 250 Load Current (mA) Load Current (mA) FIGURE 2-9: Output Voltage vs. Load Current (VR = 1.8V). FIGURE 2-12: Dropout Voltage vs. Load Current (VR = 2.8V). DS21826A-page 6 2003 Microchip Technology Inc. MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X5R), CIN = 1 F Ceramic (X5R), IL = 100 A, TA = +25C, VIN = VR +1V. 10 0.16 0.14 VR = 5.0V TJ = +125C TJ = +25C VIN = 3.8V VR = 2.8V IOUT = 50mA VIN = 2.5V VIN = 2.8V VR = 1.2V VR = 1.8V IOUT = 50mA IOUT = 50mA Dropout Voltage (V) 0.12 0.1 0.08 0.06 0.04 0.02 0 0 25 50 75 100 125 Noise (mV/Hz) 200 225 250 1 0.1 TJ = - 40C 150 175 0.01 0.01 0.1 1 10 100 1000 Load Current (mA) Frequency (KHz) FIGURE 2-13: Dropout Voltage vs. Load Current (VR = 5.0V). FIGURE 2-16: Noise vs. Frequency. FIGURE 2-14: Power Supply Ripple Rejection vs. Frequency (VR = 1.2V). FIGURE 2-17: (VR = 1.2V). Dynamic Load Step FIGURE 2-15: Power Supply Ripple Rejection vs. Frequency (VR = 2.8V). FIGURE 2-18: (VR = 1.8V). Dynamic Load Step 2003 Microchip Technology Inc. DS21826A-page 7 MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X5R), CIN = 1 F Ceramic (X5R), IL = 100 A, TA = +25C, VIN = VR +1V. FIGURE 2-19: (VR = 2.8V). Dynamic Load Step FIGURE 2-22: (VR = 5.0V). Dynamic Load Step FIGURE 2-20: (VR = 1.8V). Dynamic Load Step FIGURE 2-23: (VR = 2.8V). Dynamic Line Step FIGURE 2-21: (VR = 2.8V). Dynamic Load Step FIGURE 2-24: (VR = 1.2V). Startup From VIN DS21826A-page 8 2003 Microchip Technology Inc. MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X5R), CIN = 1 F Ceramic (X5R), IL = 100 A, TA = +25C, VIN = VR +1V. 0 Load Regulation (%) -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -40 VIN = 5.0V VIN = 4.3V VR = 2.8V IOUT = 0 to 250 mA VIN = 3.3V -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (C) FIGURE 2-25: (VR = 1.8V). Start-up From VIN FIGURE 2-28: Load Regulation vs. Junction Temperature (VR = 2.8V). 0.1 VR = 5.0V IOUT = 0 to 250 mA VIN = 6.0V Load Regulation (%) 0.05 0 -0.05 -0.1 -0.15 -0.2 -40 VIN = 5.5V -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (C) FIGURE 2-26: (VR = 2.8V). 0.3 Start-up From VIN FIGURE 2-29: Load Regulation vs. Junction Temperature (VR = 5.0V). 0.1 Line Regulation (%/V) Load Regulation (%) 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -40 VIN = 5.0V VIN = 3.5V VR = 1.8V IOUT = 0 to 200 mA 0.05 0 -0.05 -0.1 -0.15 -0.2 -0.25 -0.3 -40 -25 -10 5 V R = 1.2V VR = 1.8V VR = 2.8V VIN = 2.2V -25 -10 5 20 35 50 65 80 95 110 125 20 35 50 65 80 95 110 125 Junction Temperature (C) Junction Temperature (C) FIGURE 2-27: Load Regulation vs. Junction Temperature (VR = 1.8V). FIGURE 2-30: Line Regulation vs. Temperature (VR = 1.2V, 1.8V, 2.8V). 2003 Microchip Technology Inc. DS21826A-page 9 MCP1700 3.0 MCP1700 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. SOT23-A 1 2 3 MCP1700 PIN FUNCTION TABLE Pin No. SOT89 1 3 2 Pin No. TO-92 1 3 2 Name GND VOUT VIN Ground Terminal Regulated Voltage Output Unregulated Supply Voltage Function 3.1 Ground Terminal (GND) 3.3 Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. Only the LDO bias current (1.6 A typical) flows out of this pin; there is no high current. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the negative side of the load. Unregulated Input Voltage Pin (VIN) 3.2 Regulated Output Voltage (VOUT) Connect VOUT to the positive side of the load and the positive terminal of the output capacitor. The positive side of the output capacitor should be physically located as close to the LDO VOUT pin as is practical. The current flowing out of this pin is equal to the DC load current. Connect VIN to the input unregulated source voltage. Like all low dropout linear regulators, low source impedance is necessary for the stable operation of the LDO. The amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 1 F of capacitance will ensure stable operation of the LDO circuit. For applications that have load currents below 100 mA, the input capacitance requirement can be lowered. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low ESR characteristics of the ceramic will yield better noise and PSRR performance at highfrequency. DS21826A-page 10 2003 Microchip Technology Inc. MCP1700 4.0 4.1 DETAILED DESCRIPTION Output Regulation 4.3 Overtemperature A portion of the LDO output voltage is fed back to the internal error amplifier and compared with the precision internal bandgap reference. The error amplifier output will adjust the amount of current that flows through the P-Channel pass transistor, thus regulating the output voltage to the desired value. Any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to Figure 4-1). 4.2 Overcurrent The MCP1700 internal circuitry monitors the amount of current flowing through the P-Channel pass transistor. In the event of a short-circuit or excessive output current, the MCP1700 will turn off the P-Channel device for a short period, after which the LDO will attempt to restart. If the excessive current remains, the cycle will repeat itself. The internal power dissipation within the LDO is a function of input-to-output voltage differential and load current. If the power dissipation within the LDO is excessive, the internal junction temperature will rise above the typical shutdown threshold of 140C. At that point, the LDO will shut down and begin to cool to the typical turn-on junction temperature of 130C. If the power dissipation is low enough, the device will continue to cool and operate normally. If the power dissipation remains high, the thermal shutdown protection circuitry will again turn off the LDO, protecting it from catastrophic failure. MCP1700 VIN VOUT Error Amplifier +VIN Voltage Reference + Overcurrent Overtemperature GND FIGURE 4-1: Block Diagram. 2003 Microchip Technology Inc. DS21826A-page 11 MCP1700 5.0 FUNCTIONAL DESCRIPTION 5.2 Output The MCP1700 CMOS low dropout linear regulator is intended for applications that need the lowest current consumption while maintaining output voltage regulation. The operating continuous load range of the MCP1700 is from 0 mA to 250 mA (VR 2.5V). The input operating voltage range is from 2.3V to 6.0V, making it capable of operating from two, three or four alkaline cells or a single Li-Ion cell battery input. The maximum rated continuous output current for the MCP1700 is 250 mA (VR 2.5V). For applications where VR < 2.5V, the maximum output current is 200 mA. A minimum output capacitance of 1.0 F is required for small signal stability in applications that have up to 250 mA output current capability. The capacitor type can be ceramic, tantalum or aluminum electrolytic. The esr range on the output capacitor can range from 0 to 2.0 . 5.1 Input The input of the MCP1700 is connected to the source of the P-Channel PMOS pass transistor. As with all LDO circuits, a relatively low source impedance (10) is needed to prevent the input impedance from causing the LDO to become unstable. The size and type of the capacitor needed depends heavily on the input source type (battery, power supply) and the output current range of the application. For most applications (up to 100 mA), a 1 F ceramic capacitor will be sufficient to ensure circuit stability. Larger values can be used to improve circuit AC performance. 5.3 Output Rise time When powering up the internal reference output, the typical output rise time of 500 s is controlled to prevent overshoot of the output voltage. DS21826A-page 12 2003 Microchip Technology Inc. MCP1700 6.0 6.1 APPLICATION CIRCUITS & ISSUES Typical Application EQUATION T J ( MAX ) = P TOTAL x R JA + T AMA X TJ(MAX) = Maximum continuous junction temperature. PTOTAL = Total device power dissipation. RJA = Thermal resistance from junction to ambient. TAMAX = Maximum ambient temperature. The maximum power dissipation capability for a package can be calculated given the junction-toambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. The MCP1700 is most commonly used as a voltage regulator. It's low quiescent current and low dropout voltage make it ideal for many battery-powered applications. MCP1700 VOUT 1.8V IOUT 150 mA GND VIN VOUT VIN (2.3V to 3.2V) CIN 1 F Ceramic COUT 1 F Ceramic EQUATION FIGURE 6-1: 6.1.1 Typical Application Circuit. APPLICATION INPUT CONDITIONS Package Type = SOT23 Input Voltage Range = 2.3V to 3.2V VIN maximum = 3.2V VOUT typical = 1.8V IOUT = 150 mA maximum ( T J ( MAX ) - T A ( MAX ) ) P D ( MAX ) = --------------------------------------------------R JA PD(MAX) = Maximum device power dissipation. TJ(MAX) = Maximum continuous junction temperature. TA(MAX) = Maximum ambient temperature. RJA = Thermal resistance from junction to ambient. 6.2 6.2.1 Power Calculations POWER DISSIPATION EQUATION T J ( RISE ) = P D ( MAX ) x R JA TJ(RISE) = Rise in device junction temperature over the ambient temperature. PTOTAL = Maximum device power dissipation. RJA = Thermal resistance from junction to ambient. The internal power dissipation of the MCP1700 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (1.6 A x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION P LDO = ( V IN ( MAX ) ) - V OU T ( MIN ) ) x IOUT ( MAX ) ) PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage The maximum continuous operating junction temperature specified for the MCP1700 is +125C. To estimate the internal junction temperature of the MCP1700, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (RJA). The thermal resistance from junction to ambient for the SOT23 pin package is estimated at 230 C/W. EQUATION T J = T J ( RISE ) + T A TJ = Junction Temperature. TJ(RISE) = Rise in device junction temperature over the ambient temperature. TA = Ambient temperature. 2003 Microchip Technology Inc. DS21826A-page 13 MCP1700 6.3 Voltage Regulator TJ = TJRISE + TA(MAX) TJ = 90.2C Maximum Package Power Dissipation at +40C Ambient Temperature SOT23 (230.0C/Watt = RJA) PD(MAX) = (125C - 40C) / 230C/W PD(MAX) = 369.6 milli-Watts SOT89 (52C/Watt = RJA) PD(MAX) = (125C - 40C) / 52C/W PD(MAX) = 1.635 Watts TO92 (131.9C/Watt = RJA) PD(MAX) = (125C - 40C) / 131.9C/W PD(MAX) = 644 milli-Watts Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation, as a result of ground current, is small enough to be neglected. 6.3.1 Package POWER DISSIPATION EXAMPLE Package Type = SOT23 Input Voltage V IN = 2.3V to 3.2V LDO Output Voltages and Currents VOUT = 1.8V IOUT = 150 mA Maximum Ambient Temperature TA(MAX) = +40C Internal Power Dissipation Internal Power dissipation is the product of the LDO output current times the voltage across the LDO (VIN to VOUT). PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX) PLDO = (3.2V - (0.97 x 1.8V)) x 150 mA PLDO = 218.1 milli-Watts 6.4 Voltage Reference Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (RJA) is derived from an EIA/JEDEC standard for measuring thermal resistance for small surface mount packages. The EIA/ JEDEC specification is JESD51-7, "High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages". The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. Refer to AN792, "A Method to Determine How Much Power a SOT23 Can Dissipate in an Application", (DS00792), for more information regarding this subject. TJ(RISE) = PTOTAL x RqJA TJRISE = 218.1 milli-Watts x 230.0C/Watt TJRISE = 50.2C The MCP1700 can be used not only as a regulator, but also as a low quiescent current voltage reference. In many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. When the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the MCP1700 LDO. The low cost, low quiescent current and small ceramic output capacitor are all advantages when using the MCP1700 as a voltage reference. Ratio Metric Reference 1 A Bias CIN 1 F MCP1700 VIN VOUT GND COUT 1 F PICmicro(R) Microcontroller VREF ADO AD1 Bridge Sensor FIGURE 6-2: voltage reference. Using the MCP1700 as a 6.5 Pulsed Load Applications Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below. For some applications, there are pulsed load current events that may exceed the specified 250 mA maximum specification of the MCP1700. The internal current limit of the MCP1700 will prevent high peak load demands from causing non-recoverable damage. The 250 mA rating is a maximum average continuous rating. As long as the average current does not exceed 250 mA, pulsed higher load currents can be applied to the MCP1700. The typical current limit for the MCP1700 is 550 mA (TA +25C). DS21826A-page 14 2003 Microchip Technology Inc. MCP1700 7.0 7.1 PACKAGING INFORMATION Package Marking Information 3-Pin SOT-23A CKNN Standard Extended Temp Symbol Voltage * 1.2 1.8 2.5 3.0 3.3 5.0 CK CM CP CR CS CU 3-Pin SOT-89 CUYYWW NNN * Custom output voltages available upon request. Contact your local Microchip sales office for more information. 3-Pin TO-92 Example: XXXXXX XXXXXX YWWNNN 1700 1202E 313256 Legend: XX...X Y YY WW NNN Note: Customer specific information* Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard device marking consists of Microchip part number, year code, week code, and traceability code. 2003 Microchip Technology Inc. DS21826A-page 15 MCP1700 3-Lead Plastic Small Outline Transistor (TT) (SOT-23) E E1 2 B n p 1 p1 D c A A2 L A1 Number of Pins Pitch Outside lead pitch (basic) Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter Significant Characteristic Units Dimension Limits n p p1 A A2 A1 E E1 D L c B MIN INCHES* NOM 3 .038 .076 .040 .037 .002 .093 .051 .115 .018 5 .006 .017 5 5 MAX MIN .035 .035 .000 .083 .047 .110 .014 0 .004 .015 0 0 .044 .040 .004 .104 .055 .120 .022 10 .007 .020 10 10 MILLIMETERS NOM 3 0.96 1.92 0.89 1.01 0.88 0.95 0.01 0.06 2.10 2.37 1.20 1.30 2.80 2.92 0.35 0.45 0 5 0.09 0.14 0.37 0.44 0 5 0 5 MAX 1.12 1.02 0.10 2.64 1.40 3.04 0.55 10 0.18 0.51 10 10 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: TO-236 Drawing No. C04-104 DS21826A-page 16 2003 Microchip Technology Inc. MCP1700 3-Lead Plastic Small Outline Transistor Header (MB) (SOT-89) H E B1 3 B D D1 2 p p1 1 B1 L E1 A C Pitch Outside lead pitch (basic) Overall Height Overall Width Molded Package Width at Base Molded Package Width at Top Overall Length Tab Length Foot Length Lead Thickness Lead 2 Width Leads 1 & 3 Width Units Dimension Limits p p1 A H E E1 D D1 L c B B1 INCHES MIN MAX .059 BSC .118 BSC .055 .063 .155 .167 .090 .102 .084 .090 .173 .181 .064 .072 .035 .047 .014 .017 .017 .022 .014 .019 MILLIMETERS* MIN MAX 1.50 BSC 3.00 BSC 1.40 1.60 3.94 4.25 2.29 2.60 2.13 2.29 4.40 4.60 1.62 1.83 0.89 1.20 0.35 0.44 0.44 0.56 0.36 0.48 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side. JEDEC Equivalent: TO-243 Drawing No. C04-29 2003 Microchip Technology Inc. DS21826A-page 17 MCP1700 3-Lead Plastic Transistor Outline (TO) (TO-92) E1 D 1 n L 1 2 3 B p c A R Units Dimension Limits n p INCHES* NOM MILLIMETERS NOM 3 1.27 3.30 3.62 4.45 4.71 4.32 4.64 2.16 2.29 12.70 14.10 0.36 0.43 0.41 0.48 4 5 2 3 MIN MAX MIN MAX Number of Pins 3 Pitch .050 Bottom to Package Flat A .130 .143 .155 Overall Width E1 .175 .186 .195 Overall Length D .170 .183 .195 Molded Package Radius R .085 .090 .095 Tip to Seating Plane L .500 .555 .610 c Lead Thickness .014 .017 .020 Lead Width B .016 .019 .022 4 5 6 Mold Draft Angle Top Mold Draft Angle Bottom 2 3 4 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: TO-92 Drawing No. C04-101 3.94 4.95 4.95 2.41 15.49 0.51 0.56 6 4 DS21826A-page 18 2003 Microchip Technology Inc. MCP1700 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. MCP1700 XTape & Reel XXX Voltage Output X Tolerance X Temp. Range XX Package Examples: TO-92 Package: a) b) c) d) e) f) a) b) c) d) e) f) a) b) c) d) e) f) MCP1700-1202E/TO: MCP1700-1802E/TO: MCP1700-2502E/TO: MCP1700-3002E/TO: MCP1700-3302E/TO: MCP1700-5002E/TO: MCP1700T-1202E/MB: MCP1700T-1802E/MB: MCP1700T-2502E/MB: MCP1700T-3002E/MB: MCP1700T-3302E/MB: MCP1700T-5002E/MB: MCP1700T-1202E/TT: MCP1700T-1802E/TT: MCP1700T-2502E/TT: MCP1700T-3002E/TT: MCP1700T-3302E/TT: MCP1700T-5002E/TT: 1.2V 1.8V 2.5V 3.0V 3.3V 5.0V 1.2V 1.8V 2.5V 3.0V 3.3V 5.0V 1.2V 1.8V 2.5V 3.0V 3.3V 5.0V VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT VOUT Device: Tape and Reel: Standard Output Voltage: * MCP1700: Low Quiescent Current LDO Tape and Reel only applies to SOT-23 and SOT-89 devices 120 180 250 300 330 500 = = = = = = 1.2V 1.8V 2.5V 3.0V 3.3V 5.0V SOT89 Package: * Custom output voltages available upon request. Contact your local Microchip sales office for more information Tolerance: Temperature Range: Package: 2 E = 2% = -40C to +125C (Extended) SOT23 Package: TO = 3-lead TO-92 MB = 3-lead SOT89 TT = 3-lead SOT23 Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2003 Microchip Technology Inc. DS21826A-page 19 MCP1700 NOTES: DS21826A-page 20 2003 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." * * Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, MPLAB, PIC, PICmicro, PICSTART, PRO MATE and PowerSmart are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Application Maestro, dsPICDEM, dsPICDEM.net, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPIC, Select Mode, SmartSensor, SmartShunt, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2003, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company's quality system processes and procedures are QS-9000 compliant for its PICmicro(R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified. 2003 Microchip Technology Inc. DS21826A-page 21 M WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com ASIA/PACIFIC Australia Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Singapore 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 China - Beijing Unit 915 Bei Hai Wan Tai Bldg. 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B505A, Fullhope Plaza, No. 12 Hong Kong Central Rd. Qingdao 266071, China Tel: 86-532-5027355 Fax: 86-532-5027205 Netherlands P. A. De Biesbosch 14 NL-5152 SC Drunen, Netherlands Tel: 31-416-690399 Fax: 31-416-690340 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 India Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O'Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 United Kingdom 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44-118-921-5869 Fax: 44-118-921-5820 07/28/03 Japan Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 DS21826A-page 22 2003 Microchip Technology Inc. |
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